Journal of Guangdong University of Technology ›› 2014, Vol. 31 ›› Issue (2): 117-120.doi: 10.3969/j.issn.1007-7162.2014.02.023

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Ferroelectric, Magnetic Properties and Leakage Currents of SrBi2Ta2O9/LaNiO3 Heterostructure Thin Films

Li Wanpeng, Liu Qiuxiang   

  1. School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • Online:2014-06-06 Published:2018-06-13
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Abstract: SrBi2Ta2O9(SBT)/LaNiO3 (LNO) heterostructure thin films were grown on Si(100) substrate by using a solgel process. XRD results reveal high (115) orientation of SrBi2Ta2O9 thin film. The hysteresis loops and leakage current density of the films annealed at different temperatures were measured. The film annealed at 700 ℃ showes the lowest leakage current density and a well saturated PE hysteresis loop with the largest remnant polarization (Pr) of 716 uC/cm2. Leakage mechanism analysis suggests an Ohmic conduction. In addition, the SBT/LNO heterostructures annealed at 700 ℃ exhibit a weak roomtemperature ferromagnetic behavior.

Key words: SrBi2Ta2O9, leakage current density, ferroelectric, ferromagnetic

CLC Number: 

  • O611
[1] Wang Jia-xi, Luo Li, Yun Rui, Li Xiao-fen, Wang Yin-hai, Zhang Wei. Synthesis of BiFeO3: Y3+ Nanostructure by Sol-gel Method and Their Photocatalytic Activity [J]. Journal of Guangdong University of Technology, 2020, 37(01): 42-47.
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