Journal of Guangdong University of Technology ›› 2016, Vol. 33 ›› Issue (01): 83-88.doi: 10.3969/j.issn.1007-7162.2016.01.016

• Comprehensive Studies • Previous Articles     Next Articles

Preparation and Optical Properties of Near Infrared Persistent Luminescence Material of ZnGa2O4:Cr3+

Liu Hai-bo, Luo Li, Wang Yin-hai, Huang Bao-yu   

  1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2015-03-13 Online:2016-01-16 Published:2016-01-16

Abstract: In this paper, the near infrared persistent luminescent material ZnGa2O4:Cr3+ is prepared by a high temperature solid state method and the photoluminescence, long persistent photoluminescence, photostimulated luminescence and thermoluminescence properties of ZnGa2O4:Cr3+ are studied in details. The persistent luminescence excitation spectra reveal that the persistent luminescence of ZnGa2O4:Cr3+ comes from the charge transfer transition from O2-to Ga3+ instead of the intrinsic transition of Cr3+. The investigation in photo-stimulated persistent luminescence indicates that the sample can emit bright persistent luminescence again under infrared light excitation after the UV light excited persistent luminescence decays completely. The result shows that the UV light written information in ZnGa2O4:Cr3+can be read by infrared light. Moreover, in accordance with the result, the recombination luminescence model of conduction electrons is employed to elaborate the luminescence mechanism of the sample.

Key words: ZnGa2O4:Cr3+ ; persistent luminescence; photostimulated luminescence

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