Journal of Guangdong University of Technology ›› 2008, Vol. 25 ›› Issue (1): 11-14.
• Comprehensive Studies • Previous Articles Next Articles
[1] 唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华. PLD法制备高介电调谐率的纳米晶BZT薄膜[J]. 电子元件与材料. 2007(01) [2] 蒋力立,黄开胜,唐新桂,陈王丽华. 高度(100)取向的BST薄膜及其高介电调谐率[J]. 电子元件与材料. 2005(12)[1] Lue HT,,Tseng T Y.Application of on-wafer TRL calibra-tion on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films. IEEE Transition on Ultrasonic,Ferroelectrics,and Frequency Control . 2001 [2] Weber U,Greuel G,Boettger U,et al.Dielectric Propertiesof Ba(Zr,Ti)O3-Based Ferroelectrics for Capacitor Appli-cations. Journal of the American Ceramic Society . 2001 [3] Hennings D,,Schenll A,Simon G.Diffuse ferroelectric phasetransitions in Ba(Ti1-y,Zry)O3ceramics. Journal of the American Ceramic Society . 1982 [4] Tang X G,Zheng R K,Jiang Y P,et al.Dielectric proper-ties of high(100)-oriented Ba(Zr,Ti)O3/La0.7Ca0.3MnO3heterostructure thin films prepared by pulsed laserdeposition. Journal of Physics D Applied Physics . 2006 [5] Tang X G,Wang J,Wang X X,et al.Effects of grain sizeon the dielectric properties and tunabilities of sol-gel de-rived Ba(Zr,Ti)O3ceramics. Solid State Communications . 2004 [6] James A R,Prakash C.Ferroelectric properties of pulsedlaser deposited BaZr0.15Ti0.85O3 thin films. Applied Physics Letters . 2004 [7] Tombak A,Maria J P,Zhang Jin,et al.Tunable barium strontium titanatethin film capacitors for RF and microwave applications. IEEEMicrowave Wireless Compon Lett . 2002 [8] Yu Z,Guo R,Bhalla A S.Dielectric behavior of Ba(Ti1-xZrx)O3 singlecrystals. Journal of Applied Physics . 2000 [9] TANG X G,CHEW H K,CHAN H L W.Diffusephase transition and dielectric tunability ofBa(ZryTi1-y)O3relaxor ferroelectric ceramics. Acta Materialia . 2004 [10] Zhai J W,Yao X,Shen J,et al.Structural and dielectric properties ofBa(ZrxTi1-x)O3 thin films prepared by the sol-gel process. Journal of Physics D Applied Physics . 2004 [11] Padmini P,Taylor T R,Lefevre M J,et al.Realization of high tunabilitybarium strontium titanate by rf magnetron sputtering. Applied Physics Letters . 1999 |
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