Journal of Guangdong University of Technology ›› 2008, Vol. 25 ›› Issue (1): 11-14.

• Comprehensive Studies • Previous Articles     Next Articles

Dielectric Properties of Nanocrystalline  Ba(Zr0.2Ti0.8)O3 Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate

  

  1.  (Faculty of Physics and Optoelectric Engineering,Guangdong University of Technology,Guangzhou 510006,China)
  • Online:2008-01-01 Published:2008-01-01

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Abstract: Highly oriented Ba(Zr0.2Ti0.8)O3 thin films are grown on(001) SrTiO3∶ω(Nb)=1.0 % single crystal substrates using pulsed laser deposition and the dielectric properties of the films are evaluated.The thin films are in situ annealed at 650 ℃ for 10 min.and the highly(001)-oriented BZT thin films are obtained.The structure and surface morphology of the films have been characterized by X-ray diffraction(XRD) and atomic force microscopy(AFM).XRD and AFM characterization reveal a good crystallinity:the...

Key words: BZT thin film； pulsed laser deposition； epitaxially growth； dielectric tunability；

[1] 唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华.  PLD法制备高介电调谐率的纳米晶BZT薄膜[J]. 电子元件与材料. 2007(01)

[2] 蒋力立,黄开胜,唐新桂,陈王丽华.  高度(100)取向的BST薄膜及其高介电调谐率[J]. 电子元件与材料. 2005(12)

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