Abstract: 3D NAND Flash memory has emerged as a mainstream data storage medium due to its high performance, high storage density and low power consumption. However, its reliability is significantly affected by multiple factors such as limited program/erase endurance, data retention issues, read disturb, and inter-layer variations, which introduce noise and degrade performance. To address these challenges, this paper performs noise injection experiments on 3D NAND Flash memory to systematically investigate the bit error rate (BER) under various noise coupling conditions. By analyzing the experimentalresults, the corresponding threshold voltage distributions were extracted, and a reference voltage model tailored to different noise conditions was developed to improve the reliability of the Flash memory. Experimental results demonstrate that the proposed reference voltage model effectively reduces the BER of 3D NAND Flash memory under noise interference by up to 46% when compared to the default reference voltage. The reference voltage model provides an effective technical solution to improve the storage reliability of 3D NAND Flash memory in noisy environments, and it is expected to promote its wide application in high-reliability storage domains.