广东工业大学学报

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基于等离子体微腔增强光吸收的近红外偏振不敏感光电探测器

尹良伍1, 郎钰文2, 刘文杰1   

  1. 1. 广东工业大学 信息工程学院, 广东 广州 510006;
    2. 广东工业大学 物理与光电工程学院, 广东 广州 510006
  • 收稿日期:2023-02-28 出版日期:2024-05-25 发布日期:2024-05-25
  • 通信作者: 刘文杰(1988-),女,副教授,硕士生导师,主要研究方向为毫米波器件、高速探测器,E-mail:wjliu@gdut.edu.cn
  • 作者简介:尹良伍(1998-),男,硕士研究生,主要研究方向为半导体器件设计
  • 基金资助:
    国家自然科学基金资助项目 (61975037)

Near-infrared Polarization-insensitive Photodetector Based on Plasmonic Cavity Enhanced Light Absorption

Yin Liang-wu1, Lang Yu-wen2, Liu Wen-jie1   

  1. 1. School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;
    2. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2023-02-28 Online:2024-05-25 Published:2024-05-25

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摘要： 本文提出了一种偏振不敏感的等离子体微腔光电探测器，使用二维纳米级金圆柱阵列作为等离子体电极。圆柱的二维对称性使得等离子体电极对入射光的偏振角度不敏感。通过在亚波长金属圆柱与金属反射镜之间形成金属?半导体?金属腔，在超薄区域实现光吸收的有效增强。利用时域有限差分法和有限元法，计算了光电探测器的光响应和电响应，并分析了几何参数对金纳米圆柱性能的影响。结果表明，优化参数后，器件整体光吸收率为94.7%，GaAs半导体中光吸收率可以达到81.1%，器件的响应度在5 V偏置电压、10 mW入射光功率下可以达到0.37 A/W。该器件表现出极低的偏振依赖特性，偏振角度的变化不会引起器件半导体中吸收率的变化，并且在入射角度发生变化时，吸收峰位置不发生变化，吸收响应也能够得到有效保留。

关键词: 光电探测器, 等离激元, 砷化镓, 偏振不敏感, 响应度

Abstract: A polarization-insensitive plasmonic cavity photodetector is presented using a two-dimensional nanoscale gold cylindrical array as a plasma electrode. The two-dimensional symmetry of the cylinder makes the plasma electrode insensitive to the polarization angle of the incident light. By forming a metal-semiconductor-metal cavity between a subwavelength metal cylinder and a metal reflector, effective enhancement of light absorption in the ultrathin region can be achieved. The optical and electrical responses of the photodetector were calculated using the time-domain finite difference method and the finite element method, and the effects of the geometric parameters on the performance of the gold nanocylinders were analyzed. The results show that after optimizing the parameters, the overall light absorption rate of the device is 94.7%, and the light absorption rate in GaAs semiconductor can reach 81.1%, and the responsivity of the device can reach 0.37 A/W at 5 V bias voltage and 10 mW incident light power. The device exhibits extremely low polarization-dependent characteristics, where changes in polarization angle do not cause changes in absorption in the device semiconductor, and the absorption response can be effectively preserved without changes in the position of the absorption peak when the angle of incidence changes.

Key words: photodetector, plasmonic, GaAs, polarization insensitivity, responsivity

中图分类号: 

  • O436.2
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