兼容5G毫米波n257和n258频段的氮化镓低噪声放大器设计研究

A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257 and n258 Applications

摘要: 基于100 nm的氮化镓(Gallium Nitride, GaN) 高电子迁移率晶体管(High Electron Mobility Transistor, HEMT) 工艺设计了一款毫米波低噪声放大器(Low Noise Amplifier, LNA) 单片式微波集成电路(Monolithic Microwave Integrated Circuit, MMIC) 芯片。该款低噪声放大器采用三级级联的拓扑结构，对带宽、噪声和增益进行了联合优化设计。测试结果显示，工作频率范围覆盖24~30 GHz，可兼顾5G毫米波n257(26.5~29.5 GHz) 和n258(24.25~27.5 GHz) 频段，噪声系数可达到2.4~2.5 dB的水平，小信号增益在21.1~24.1 dB之间，输出1 dB功率压缩点大于14.4 dBm的水平。

Abstract: A millimeter wave low noise amplifier (LNA) fabricated in 100nm gallium nitride (GaN) high electron mobility transistor (HEMT) process is presented. With a three-stage cascade topology and an optimum concurrent design, this LNA, covering a frequency range from 24 to 30 GHz for 5G millimeter wave Band n257 and n258 applications, achieves low noise figure of 2.4~2.5 dB, small signal gain of 21.1~24.1 dB, and output 1 dB power compression point of greater than 14.4 dBm.