Abstract: Bi₂NiMnO₆ (abbreviated as BNMO) thin films grow on LaNiO₃ buffered Si(100) substrate prepared by chemical solution deposition. The structure of the thin films is characterized by X-ray diffraction, and both the ferroelectric properties and leakage current behavior are measured by ferroelectric tester at room temperature. The results suggest that they have become crystalline phases in the two samples annealed in N₂ and O₂ respectively. The ferroelectric properties appear in all samples under room temperature and the BNMO sample shows a fairly low leakage current density. Furthermore, the mechanism of electrical conductivity is also investigated in the paper.