广东工业大学学报 ›› 2008, Vol. 25 ›› Issue (1): 11-14.

• 综合研究 • 上一篇    下一篇

纳米晶Ba(Zr0.2Ti0.8)O3薄膜的外延生长与介电特性

  

  1. 广东工业大学物理与光电工程学院; 广东工业大学物理与光电工程学院 广东广州510006; 广东广州510006;
  • 出版日期:2008-01-01 发布日期:2008-01-01
  • 基金资助:

    广东省自然科学基金资助项目(05001825)

Dielectric Properties of Nanocrystalline  Ba(Zr0.2Ti0.8)O3 Thin Films Epitaxially Grown on(001) SrTiO3∶Nb Single Crystal Substrate

  1.  (Faculty of Physics and Optoelectric Engineering,Guangdong University of Technology,Guangzhou 510006,China)
  • Online:2008-01-01 Published:2008-01-01

摘要: 用脉冲激光沉积工艺在半导体(001)SrTiO3∶ω(Nb)=1.0%单晶基片上,外延生长出Ba(Zr0.2Ti0.8)O3(简称BZT)介电薄膜.在650℃原位退火10 min,薄膜为(001)外延生长的晶粒.薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成.BZT薄膜(002)峰的半峰宽只有0.72°,说明薄膜晶化良好;薄膜的平均晶粒为90 nm,表面均方根粗糙度为4.3 nm,说明薄膜表面平整.在室温、100 kHz和500 kV/cm条件下,BZT的最大介电常数和调谐百分率分别达到317和65%. 更多还原

关键词: 锆钛酸钡薄膜; 脉冲激光沉积; 外延生长; 介电调谐特性;

Abstract: Highly oriented Ba(Zr0.2Ti0.8)O3 thin films are grown on(001) SrTiO3∶ω(Nb)=1.0 % single crystal substrates using pulsed laser deposition and the dielectric properties of the films are evaluated.The thin films are in situ annealed at 650 ℃ for 10 min.and the highly(001)-oriented BZT thin films are obtained.The structure and surface morphology of the films have been characterized by X-ray diffraction(XRD) and atomic force microscopy(AFM).XRD and AFM characterization reveal a good crystallinity:the...

Key words: BZT thin film; pulsed laser deposition; epitaxially growth; dielectric tunability;

[1] 唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华.  PLD法制备高介电调谐率的纳米晶BZT薄膜[J]. 电子元件与材料. 2007(01)

[2] 蒋力立,黄开胜,唐新桂,陈王丽华.  高度(100)取向的BST薄膜及其高介电调谐率[J]. 电子元件与材料. 2005(12)

[1] Lue HT,,Tseng T Y.Application of on-wafer TRL calibra-tion on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films. IEEE Transition on Ultrasonic,Ferroelectrics,and Frequency Control . 2001

[2] Weber U,Greuel G,Boettger U,et al.Dielectric Propertiesof Ba(Zr,Ti)O3-Based Ferroelectrics for Capacitor Appli-cations. Journal of the American Ceramic Society . 2001

[3] Hennings D,,Schenll A,Simon G.Diffuse ferroelectric phasetransitions in Ba(Ti1-y,Zry)O3ceramics. Journal of the American Ceramic Society . 1982

[4] Tang X G,Zheng R K,Jiang Y P,et al.Dielectric proper-ties of high(100)-oriented Ba(Zr,Ti)O3/La0.7Ca0.3MnO3heterostructure thin films prepared by pulsed laserdeposition. Journal of Physics D Applied Physics . 2006

[5] Tang X G,Wang J,Wang X X,et al.Effects of grain sizeon the dielectric properties and tunabilities of sol-gel de-rived Ba(Zr,Ti)O3ceramics. Solid State Communications . 2004

[6] James A R,Prakash C.Ferroelectric properties of pulsedlaser deposited BaZr0.15Ti0.85O3 thin films. Applied Physics Letters . 2004

[7] Tombak A,Maria J P,Zhang Jin,et al.Tunable barium strontium titanatethin film capacitors for RF and microwave applications. IEEEMicrowave Wireless Compon Lett . 2002

[8] Yu Z,Guo R,Bhalla A S.Dielectric behavior of Ba(Ti1-xZrx)O3 singlecrystals. Journal of Applied Physics . 2000

[9] TANG X G,CHEW H K,CHAN H L W.Diffusephase transition and dielectric tunability ofBa(ZryTi1-y)O3relaxor ferroelectric ceramics. Acta Materialia . 2004

[10] Zhai J W,Yao X,Shen J,et al.Structural and dielectric properties ofBa(ZrxTi1-x)O3 thin films prepared by the sol-gel process. Journal of Physics D Applied Physics . 2004

[11] Padmini P,Taylor T R,Lefevre M J,et al.Realization of high tunabilitybarium strontium titanate by rf magnetron sputtering. Applied Physics Letters . 1999
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