广东工业大学学报 ›› 2008, Vol. 25 ›› Issue (1): 11-14.

• 综合研究 • 上一篇    下一篇

纳米晶Ba(Zr0.2Ti0.8)O3薄膜的外延生长与介电特性

  

  1. 广东工业大学物理与光电工程学院； 广东工业大学物理与光电工程学院 广东广州510006； 广东广州510006；
  • 出版日期:2008-01-01 发布日期:2008-01-01
  • 基金资助:

    广东省自然科学基金资助项目(05001825)

Dielectric Properties of Nanocrystalline  Ba(Zr0.2Ti0.8)O3 Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate

  1.  (Faculty of Physics and Optoelectric Engineering,Guangdong University of Technology,Guangzhou 510006,China)
  • Online:2008-01-01 Published:2008-01-01

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摘要： 用脉冲激光沉积工艺在半导体(001)SrTiO3∶ω(Nb)=1.0%单晶基片上,外延生长出Ba(Zr0.2Ti0.8)O3(简称BZT)介电薄膜.在650℃原位退火10 min,薄膜为(001)外延生长的晶粒.薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成.BZT薄膜(002)峰的半峰宽只有0.72°,说明薄膜晶化良好;薄膜的平均晶粒为90 nm,表面均方根粗糙度为4.3 nm,说明薄膜表面平整.在室温、100 kHz和500 kV/cm条件下,BZT的最大介电常数和调谐百分率分别达到317和65%. 更多还原

关键词: 锆钛酸钡薄膜； 脉冲激光沉积； 外延生长； 介电调谐特性；

Abstract: Highly oriented Ba(Zr0.2Ti0.8)O3 thin films are grown on(001) SrTiO3∶ω(Nb)=1.0 % single crystal substrates using pulsed laser deposition and the dielectric properties of the films are evaluated.The thin films are in situ annealed at 650 ℃ for 10 min.and the highly(001)-oriented BZT thin films are obtained.The structure and surface morphology of the films have been characterized by X-ray diffraction(XRD) and atomic force microscopy(AFM).XRD and AFM characterization reveal a good crystallinity:the...

Key words: BZT thin film； pulsed laser deposition； epitaxially growth； dielectric tunability；

[1] 唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华.  PLD法制备高介电调谐率的纳米晶BZT薄膜[J]. 电子元件与材料. 2007(01)

[2] 蒋力立,黄开胜,唐新桂,陈王丽华.  高度(100)取向的BST薄膜及其高介电调谐率[J]. 电子元件与材料. 2005(12)

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