广东工业大学学报 ›› 2022, Vol. 39 ›› Issue (04): 107-112.doi: 10.12052/gdutxb.210117
龙慧1, 魏子乔1, 罗思瑶2, 董华锋1, 陈传盛2
Long Hui1, Wei Zi-qiao1, Luo Si-yao2, Dong Hua-feng1, Chen Chuan-sheng2
摘要: 二维纳米材料由于其结构和性能的独特性受到广泛的关注,各类二维纳米材料合成方法和表面改性的研究也得到了快速发展,在光催化性能提升和能源环境领域等方面发挥着重要作用。本文通过在复合物GO/WS2/Mg-ZnO(rGOWMZ)中添加直接带隙半导体In2Se3纳米片,合成rGOWMZ+In2Se3复合材料。并研究其光催化性能,发现性能得到了明显的改善,其中In2Se3纳米片质量分数为0.5%经过600℃热处理的复合物,在自然光照射下对罗丹明B的降解率为99.6%。本报道中In2Se3纳米片是通过液相超声剥离法制备的,大小为100 nm,厚度约为5层。并采用透射电子显微镜、原子力显微镜、X射线衍射仪、扫描电子显微镜对复合材料进行了物相分析。发现rGOWMZ+In2Se3复合材料对有机颜料罗丹明B具有优异的光催化性能,此复合材料将在光催化领域中具有巨大的应用潜力。
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