广东工业大学学报 ›› 2023, Vol. 40 ›› Issue (04): 117-124.doi: 10.12052/gdutxb.220146
张昱, 黄钟伟, 刘强, 杨冠南, 崔成强
Zhang Yu, Huang Zhong-wei, Liu Qiang, Yang Guan-nan, Cui Cheng-qiang
摘要: 为了实现第三代半导体材料的广泛应用并提高第三代半导体器件的性能,开发新型的、高性能的封装互连材料成为了关键举措。其中,微纳米铜材料由于其具有表面效应和小尺寸效应等特点,能够在低温条件下烧结成高导电性、高导热性、高稳定性和耐电迁移性的块体结构,成为开发新型封装互连材料的研究热点。但是微纳米铜材料极易氧化、团聚和产率低的问题,限制了其在第三代半导体器件上的应用,提高微纳米铜材料的抗氧化性成为解决其应用的关键问题。本文采用苯并咪唑对微纳米铜材料进行处理,通过扫描电子显微镜、红外光谱等表征手段,证实了苯并咪唑对微纳米铜颗粒的包覆。对铜膏进行X射线衍射和X射线光电子能谱表征,证明该铜膏能够在空气中放置120 d不被氧化。将铜膏应用于烧结键合,300 ℃条件下制备的互连接头的强度达到了62.3 MPa,烧结体电阻率低至6.18×10−8 Ω·m。研究结果表明,苯并咪唑处理微纳米铜材料的方法,可以实现微纳米铜材料的超强抗氧化和良好的互连性能,对第三代半导体封装互连材料的研究和发展具有深远意义。
中图分类号:
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