Journal of Guangdong University of Technology ›› 2024, Vol. 41 ›› Issue (06): 133-138.doi: 10.12052/gdutxb.230038

• Information and Communication Engineering • Previous Articles    

Near-infrared Polarization-insensitive Photodetector Based on Plasmonic Cavity Enhanced Light Absorption

Yin Liang-wu1, Lang Yu-wen2, Liu Wen-jie1   

  1. 1. School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;
    2. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2023-02-28 Published:2024-05-25

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Abstract: A polarization-insensitive plasmonic cavity photodetector is presented using a two-dimensional nanoscale gold cylindrical array as a plasma electrode. The two-dimensional symmetry of the cylinder makes the plasma electrode insensitive to the polarization angle of the incident light. By forming a metal-semiconductor-metal cavity between a subwavelength metal cylinder and a metal reflector, effective enhancement of light absorption in the ultrathin region can be achieved. The optical and electrical responses of the photodetector were calculated using the time-domain finite difference method and the finite element method, and the effects of the geometric parameters on the performance of the gold nanocylinders were analyzed. The results show that after optimizing the parameters, the overall light absorption rate of the device is 94.7%, and the light absorption rate in GaAs semiconductor can reach 81.1%, and the responsivity of the device can reach 0.37 A/W at 5 V bias voltage and 10 mW incident light power. The device exhibits extremely low polarization-dependent characteristics, where changes in polarization angle do not cause changes in absorption in the device semiconductor, and the absorption response can be effectively preserved without changes in the position of the absorption peak when the angle of incidence changes.

Key words: photodetector, plasmonic, GaAs, polarization insensitivity, responsivity

CLC Number: 

  • O436.2
[1] MUELLER T, XIA F, AVOURIS P. Graphene photodetectors for high-speed optical communications [J]. Nature Photonics, 2010, 4(5): 297-301.
[2] KOPPENS F H L, MUELLER T, AVOURIS P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems [J]. Nature Nanotechnology, 2014, 9(10): 780-793.
[3] SUN Z, AIGOUY L, CHEN Z. Plasmonic-enhanced perovskite-graphene hybrid photodetectors[J]. Nanoscale, 2016, 8(14) : 7377-7383.
[4] SHEN L, FANG Y J, WANG D, et al. A Self-powered, sub-nanosecond-response solution-processed hybrid perovskite photodetector for time-resolved photoluminescence-lifetime detection [J]. Advanced Materials, 2016, 28(48): 10794-10800.
[5] LUO L B, ZHANG X X, LI C, et al. Fabrication of PdSe2/GaAs heterojunction for sensitive near-infrared photovoltaic detector and image sensor application [J]. Chinese Journal of Chemical Physics, 2020, 33(6): 733-742.
[6] ZHENG D S, WANG J L, HU W D, et al. When nanowires meet ultrahigh ferroelectric field-high-performance full-depleted nanowire photodetectors [J]. Nano Letters, 2016, 16(4): 2548-2555.
[7] HAO L Z, DU Y J, WANG Z G, et al. Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity [J]. Nanoscale, 2020, 12(13): 7358-7365.
[8] 李定昌, 黄金, 林伟杰, 等. 高倍聚光下三结砷化镓电池输出特性实验研究[J]. 广东工业大学学报, 2015, 32(4): 25-29.
LI D C, HUANG J, LIN W J, et al. Experimental study of output characteristics of triple-junction GaAs cells under high-powered concentrator [J]. Journal of Guangdong University of Technology, 2015, 32(4): 25-29.
[9] 姚源卫, 蔡敏, 屈晔, 三元GaAS/ALAS准周期超晶格系统的电子隧穿透射谱[J]. 广东工业大学学报, 2002, 19(3) : 14-17.
YAO Y W, CAI M, QU Y. The light binding of the three tile quasiperiodic semiconductor superlattices[J]. Journal of Guangdong University of Technology, 2002, 19(3) : 14-17.
[10] DAS N, MASOULEH F F, MASHAYEKHI H R. Light absorption and reflection in nanostructured GaAs metal-semiconductor-metal photodetectors [J]. IEEE Transactions on Nanotechnology, 2014, 13(5): 982-989.
[11] ZHU X T, LIN F Y, ZHANG Z H, et al. Enhancing performance of a GaAs/AlGaAs/GaAs nanowire photodetector based on the two-dimensional electron-hole tube structure [J]. Nano Letters, 2020, 20(4): 2654-2659.
[12] DAI X, ZHANG S, WANG Z L, et al. GaAs/AlGaAs nanowire photodetector [J]. Nano Letters, 2014, 14(5): 2688-2693.
[13] HUSSAIN A A, SHARMA B, BARMAN T, et al. Self-powered broadband photodetector using plasmonic titanium nitride [J]. ACS Applied Materials & Interfaces, 2016, 8(6): 4258-4265.
[14] JEE S W, ZHOU K, KIM D W. A silicon nanowire photodetector using Au plasmonic nanoantennas [J]. Nano Convergence, 2014, 1(29): 1-7.
[15] BAHARI A, SALIANEH M G. High-quantum efficiency of the plasmonic photodetectors-based on coupling between Ag nanoparticles and Ag nanograting electrodes [J]. Plasmonics, 2018, 14(2): 415-423.
[16] YANG Y J, JEON J, PARK J H, et al. Plasmonic transition metal carbide electrodes for high-performance InSe photodetectors [J]. ACS NANO, 2019, 13(8): 8804-8810.
[17] ALI R K, NIKOUFARD M. Hybrid plasmonic ring-resonator uni-traveling carrier pin-photodetector on InGaAsP/InP layer stack [J]. IEEE Transactions on Electron Devices, 2020, 67(8): 3221-3228.
[18] NUSIR A I, HILL A M, MANASREH M O, et al. Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes [J]. Photonics Research, 2014, 3(1): 1-4.
[19] SHARAF R, DANESHMANDI O, RAHIM S G, et al. A new GaAs metal-semiconductor-metal photodetector based on hybrid plasmonic structure to improve the optical and electrical responses [J]. Plasmonics, 2016, 11(2): 441-448.
[20] WU C Y, ZENG B, ZHOU K, et al. Grating perovskite enhanced polarization-sensitive GaAs-based photodetector [J]. IEEE Transactions on Electron Devices, 2022, 69(5): 2469-2473.
[21] KARL P, MENNLE S, UBL M, et al. Tunable infrared high absorbing polarization independent niobium nitride plasmonic perfect absorber nanowire photodetectors [J]. Optical Materials Express, 2022, 12(7): 2453-2461.
[22] 孔姣. 基于表面等离子体增强的太赫兹器件研究[D]. 福州: 福州大学, 2017.
[23] BURFORD N, EL-SHENAWEE M. Computational modeling of plasmonic thin-film terahertz photoconductive antennas [J]. Journal of the Optical Society of America B-Optical Physics, 2016, 33(4): 748-759.
[24] BASHIRPOUR M, GHORBANI S, KOLAHDOUZ M, et al. Significant performance improvement of a terahertz photoconductive antenna using a hybrid structure [J]. RSC Advances, 2017, 7(83): 53010-53017.
[25] SUN Z, FANG Y. Fabry-Pérot interference cavity length tuned by plasmonic nanoparticle metasurface for nanophotonic device design [J]. ACS Applied Nano Materials, 2020, 3(11): 10732-10738.
[26] ZHAO X W, MOEEN M, TOPRAK M S, et al. Design impact on the performance of Ge PIN photodetectors [J]. Journal of Materials Science:Materials in Electronics, 2019, 31(1): 18-25.
[1] LI Ding-Chang, HUANG Jin, LIN Wei-Jie, XIE Ze-Yang. Experimental Study of Output Characteristics of Triple-junction GaAs Cells under High-powered Concentrator [J]. Journal of Guangdong University of Technology, 2015, 32(04): 25-29.doi: 10.12052/gdutxb.230038
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