Journal of Guangdong University of Technology ›› 1999, Vol. 16 ›› Issue (3): 89-94.

• Comprehensive Studies • Previous Articles     Next Articles

SOI Technology and the Latest Develop ment in It

  

  1. ( 1 . Guangdong Agricultural, Industrialand Com mercial Administration College, Guangzhou 510507 , China ;2 . Dept.of Mathematics and Physics, G D U T, Guangzhou 510090 , China)
  • Online:1999-10-02 Published:1999-10-02

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[2] 范缇文,袁俊,L.M.Brown.  氮离子注入形成的SOI结构的研究[J]. 半导体学报. 1988(05)

[3] 闵靖.  形成SIMOX结构的PIII新技术的研究[J]. 半导体学报. 1995(08)

[4] 粟根克昶,揭庆应.  三维器件和SOI技术[J]. 微电子学. 1986(01)

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[6] Chuang Chingte,Lu Pongfei,Carl J. Anderson,et al.S O Ifor Digital C M O S V L S I: Design Considerations andadvance. P R O C E E D I N G Sof T H E I E E E . 1998

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