Abstract:

(Sr_0.9Pb_0.1)TiO₃ ceramics were prepared by the traditional high temperature solid-state reaction method. The structural, electrical properties and impedance of ceramics were investigated. XRD results show that the ceramics show typical tetragonal perovskite structure. The resistance states can be switched by applying voltage pulses ±60 V. The phenomenon may be attributed to oxygen vacancies caused by Pb volatilization in the preparation of materials, which can be further confirmed by the impedance spectrum analysis of samples. Oxygen vacancy mechanism is the cause of the changes in the electrical properties by using the Arrhenius formula to calculate the activation energy. These resistance switching behaviors indicate that ceramics can even exhibit resistance switching performance as well as thin film devices or single crystal devices and provide the possibility of new switching devices with the memory effect composed of ceramics.

Key words: (Sr_0.9Pb_0.1)TiO₃; oxygen vacancy; ceramic resistance switching characteristics; high speed nonvolatile memory device