Journal of Guangdong University of Technology ›› 2005, Vol. 22 ›› Issue (1): 7-9.

• Comprehensive Studies • Previous Articles     Next Articles

Effect of Annealing Temperature on the Optical Properties of PbZrO3Thin Films

  

  1. (1. Experiment Centre, Guangdong University of Technology, Guangzhou 510090,China; 2.Faculty of Applied Physics, Guangdong University of Technology, Guangdong 510090, China 3.Dept. of Physics, Jinan University, Guangzhou 510632, China)
  • Online:2005-03-02 Published:2005-03-02

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Abstract: PbZrO(3)(PZ) thin films grown on fused quartz substrates are prepared by sol-gel process. The crystal structure of PZ thin films has been studied by XRD. The results show that the well-crystallized PZ thin film is pseudocubic phase. When the film on fused quartz substrate is annealed at 750?℃, the grain size is about 30～50?nm. The optical transmittance spectra of the PbZrO(3)thin films on fused quartz substrates annealed at 450, 600 and 750?℃ are measured with a double-beam UV-VIS scanning spectrophotometer. The transmission spectra of the samples are measured, using air as a reference at a wavelength range 200 to 900?nm. The results show that the band gaps are 4.11, 4.56 and 4.59?eV, respectively, for the films annealed at 450, 600 and 750?℃.

Key words: PbZrO3thin film； optical property； band gap；

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