Journal of Guangdong University of Technology ›› 2024, Vol. 41 ›› Issue (06): 26-32.doi: 10.12052/gdutxb.240115

• Integrated Circuit Science and Engineering • Previous Articles    

A Design of a 24-27 GHz Cascode High Gain Low Noise Amplifier

Chen Hong-qi1, Luo De-xin2, Lan Liang1, Zhang Zhi-hao2, Zhang Guo-hao2   

  1. 1. School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;
    2. School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2024-10-12 Published:2024-12-31

Abstract: Based on a 40 nm CMOS process, a high-gain low noise amplifier (LNA) chip was designed. The topology architecture of the chip adopted transformer input matching technology and positive feedback same-phase amplification technology to improve the input matching degree and gain. By introducing an active biasing network and a transformer matching network into the input stage of the traditional common-source common-gate structure, the chip can not only work stably at room temperature, but also shows excellent performance within the temperature range of –40 ℃ to 125 ℃ in simulation. Therefore, this design can be used for transceiver receiving ports in millimeter wave frequency bands under different temperature environments, and has certain temperature stability characteristics. The chip’s layout size is 0.383 mm×0.694 mm. The post-layout simulation results show that the LNA achieves a noise figure of less than 4.96 dB, a maximum gain of 18.11 dB, an input return loss of less than –16.08 dB, and an output return loss of less than –11.54 dB within the working frequency range of 24~27 GHz at room temperature. In addition, the LNA design has excellent performance indicators such as an input P1dB of –20.36 dBm and a DC power dissipation of 12.8 mW.

Key words: high-gain, transformer input matching, positive feedback same-phase amplification technology, active biasing network

CLC Number: 

  • TN492
[1] FU J, BARDEH M G, PARAMESH J, et al. A millimeter-wave concurrent LNA in 22-nm CMOS FDSOI for 5G applications[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 71(3): 1031-1043.
[2] QIAN Y, SHEN Y, HU S. Millimeter-wave CMOS low-noise amplifier with high gain and compact footprint[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33(6): 699-702.
[3] DAS T. Practical considerations for low noise amplifier design[J]. Freescale Semiconductor, 2013, 10: 1-10.
[4] XING Z, LIANG Q, XU R. A Design on silicon-based millimeter-wave low noise amplifier circuits[C]//2024 IEEE 7th International Conference on Electronic Information and Communication Technology (ICEICT). Xi’an: IEEE, 2024: 757-759.
[5] XU H, WEN K. Design of a 20-to-40 GHz millimetre-wave ultra-wideband low noise amplifier in 55-nm CMOS[C]//2024 20th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD). Guangzhou: IEEE, 2024: 1-6.
[6] ARIAS-PURDUE A, GUIDRY M, LAM E, et al. Inductive source degeneration in 40-nm GaN HEMTs for operation above 100 GHz[J]. IEEE Transactions on Microwave Theory and Techniques, 2023, 72(1): 26-35.
[7] HU Y, CHI T. A systematic approach to designing broadband millimeter-wave cascode common-source with inductive degeneration low noise amplifiers[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2023, 70(4): 1489-1502.
[8] KHYALIA S K, ZELE R H, CHIONG C C, et al. A 22-33-GHz Gm-boosting low-power noise-canceling LNA in 40-nm CMOS process[J]. IEEE Transactions on Microwave Theory and Techniques, 2024, 72(7): 4017-4027.
[9] FENG G, ZHENG L, WANG Y, et al. A 0.5-V 0.88-mW low noise amplifier with active and passive Gm enhancements in sub-6 GHz band[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33(8): 1159-1162.
[10] KE J, LIN Z, FENG G, et al. A 52–73-GHz LNA with tri-coupled transformer for Gm-boosting and enhanced noise canceling[J]. IEEE Journal of Solid-State Circuits, 2024, 59(3): 668-676.
[11] HAN A, LUO X. A 60-GHz current-reused cascode noise-canceling low noise amplifier[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 1-1.
[12] KOBAL E, SIRIBURANON T, STASZEWSKI R B, et al. A compact, low-power, low-NF, millimeter-wave cascode LNA with magnetic coupling feedback in 22-nm FD-SOI CMOS for 5G applications[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2022, 70(4): 1331-1335.
[13] GUO S, XI T, GUI P, et al. A transformer feedback Gm-boosting technique for gain improvement and noise reduction in mm-wave cascode LNAs[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(7): 2080-2090.
[14] WALLING J S, SHEKHAR S, ALLSTOT D J. A Gm-boosted current-reuse LNA in 0.18 μm CMOS[C]//2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Honolulu: IEEE, 2007: 613-616.
[15] URAIN A, DEL RIO D, GURUTZEAZA I, et al. Design and layout considerations of a D-Band SiGe LNA for radiometric applications[C]//2021 XXXVI Conference on Design of Circuits and Integrated Systems (DCIS). Vila do Conde, Portugal: IEEE, 2021: 1-5.
[16] STEFANOVSKA A, WANG Z G. Ka-Band LNA design using systematic circuit design methodology and design applicable equations[C]//2022 7th International Conference on Integrated Circuits and Microsystems (ICICM). Xi'an: IEEE, 2022: 86-91.
[17] KONG S, LEE H D, JANG S, et al. A 28-GHz CMOS LNA with stability-enhanced Gm-boosting technique using transformers[C]//2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). Boston: IEEE, 2019: 7-10.
[18] QIN P, XUE Q. Compact wideband LNA with gain and input matching bandwidth extensions by transformer[J]. IEEE Microwave and Wireless Components Letters, 2017, 27(7): 657-659.
[19] HEDAYATI M K, ABDIPOUR A, SHIRAZI R S, et al. A 33-GHz LNA for 5G wireless systems in 28-nm bulk CMOS[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2018, 65(10): 1460-1464.
[20] LEE S, HONG S. Frequency-reconfigurable dual-band low-noise amplifier with interstage Gm-boosting for millimeter-wave 5G communication[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33(4): 463-466.
[21] TAERQ M M H, JAHAN N, HOSSAIN Q D. Design of a millimeter-wave band LNA using SIW resonator in 180-nm CMOS technology[C]//2023 6th International Conference on Electrical Information and Communication Technology (EICT). Boston: IEEE, 2023: 1-5.
[22] RADPOUR M, BELOSTOTSKI L. Wideband LNA employing intrinsic feedback and back-gate resistance for noise and input power matching[J]. IEEE Transactions on Microwave Theory and Techniques, 2023, 72(6): 3373-3386.
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